Dr Spyros Stathopoulos
- Institute for Integrated Micro and Nano Systems
- School of Engineering
Contact details
- Tel: +44(0)1316506047
- Email: s.stathopoulos@ed.ac.uk
- Web: Research explorer
- ORCID
Address
- Street
-
Murchison House - Rm 1.24C
10 Max Born Crescent
King's Buildings Campus - City
- Post code
- EH9 3BF
Research summary
- Thin film development and processing
- Heterogeneous integration of thin films
- RRAM and novel memories
- Semiconductor physics and processing
-
Multi-State Memristors and Their Applications: An Overview
In:
IEEE Journal of Emerging and Selected Topics in Circuits and Systems
DOI: https://doi.org/10.1109/JETCAS.2022.3223295
Research output: Contribution to Journal › Article (E-pub ahead of print) -
Thermal Effects on Initial Volatile Response and Relaxation Dynamics of Resistive RAM Devices
(4 pages)
In:
IEEE Electron Device Letters, vol. 43, pp. 386-389
DOI: https://doi.org/10.1109/LED.2022.3145620
Research output: Contribution to Journal › Article (Published) -
Design Flow for Hybrid CMOS/Memristor Systems - Part I: Modeling and Verification Steps
(14 pages)
In:
IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 68, pp. 4862-4875
DOI: https://doi.org/10.1109/TCSI.2021.3122343
Research output: Contribution to Journal › Article (Published) -
Design Flow for Hybrid CMOS/Memristor Systems - Part II: Circuit Schematics and Layout
(13 pages)
In:
IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 68, pp. 4876-4888
DOI: https://doi.org/10.1109/TCSI.2021.3122381
Research output: Contribution to Journal › Article (Published) -
Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOx-Based Memristors—Part I: Behavioral Model
In:
IEEE Transactions on Electron Devices, vol. 68, pp. 4877-4884
DOI: https://doi.org/10.1109/TED.2021.3101996
Research output: Contribution to Journal › Article (Published) -
Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOx Memristors—Part II: Physics-Based Model
In:
IEEE Transactions on Electron Devices, vol. 68, pp. 4885-4890
DOI: https://doi.org/10.1109/TED.2021.3102002
Research output: Contribution to Journal › Article (Published) -
Frequency Response of Metal-Oxide Memristors
(7 pages)
In:
IEEE Transactions on Electron Devices, vol. 68, pp. 3636-3642
DOI: https://doi.org/10.1109/TED.2021.3080233
Research output: Contribution to Journal › Article (Published) -
UV induced resistive switching in hybrid polymer metal oxide memristors
In:
Scientific Reports, vol. 10
DOI: https://doi.org/10.1038/s41598-020-78102-x
Research output: Contribution to Journal › Article (Published) -
Monitoring PSA levels as chemical state-variables in metal-oxide memristors
In:
Scientific Reports, vol. 10
DOI: https://doi.org/10.1038/s41598-020-71962-3
Research output: Contribution to Journal › Article (Published) -
Bidirectional Volatile Signatures of Metal-Oxide Memristors-Part I: Characterization
(8 pages)
In:
IEEE Transactions on Electron Devices, vol. 67, pp. 5158-5165
DOI: https://doi.org/10.1109/TED.2020.3014854
Research output: Contribution to Journal › Article (Published)